- Industri: Semiconductors
- Number of terms: 2987
- Number of blossaries: 0
- Company Profile:
National Semiconductor Corporation designs, develops, manufactures, and markets analog and mixed-signal integrated circuits and sub-systems.
Burn-in (that is, exposure to high temperature with electrical bias applied) performed for extended duration (usually one thousand hours at 125°C). Normally a sample test.
Industry:Semiconductors
The separation of circuit elements on a semiconductor device through the construction of a barrier oxide between the elements (not to be confused with dielectric isolation, in which the isolation passes completely under the circuit element.
Industry:Semiconductors
For integrated circuits, the number of semiconductor elements per unit area of chip size, frequently expressed in terms of number of gate equivalents.
Industry:Semiconductors
The testing of a number of devices at the same time (normally accomplished by mounting the devices on printed circuit boards which interface with the tester) as opposed to serial testing which tests one device at a time.
Industry:Semiconductors
An interaction between diffused circuit elements. A good example of a parasitic would be the collector series resistance (RSAT) of a transistor and the associated capacitance of the collector-to-substrate junction. In fact, the buried layer N+ diffusion is used to reduce collector resistance. The nature of current semiconductor technology makes it impossible to eliminate these parasitics. Where their effect on the circuit is significant, or when the circuit is designed to utilize these parasitics, they are shown on the schematic.
Industry:Semiconductors
A measurement scale for gas or liquid cleanliness, normally stated in parts per cubic foot. For example, a Class 10 working area would be one which contained no more than 10 particles greater than one micron in size per cubic foot of air.
Industry:Semiconductors
The surface coating of the die (usually thermally grown silicon dioxide, Si02) through which contact and diffusion windows are opened.
Industry:Semiconductors
Devices such as resistors or capacitors which have no amplification or control characteristics.
Industry:Semiconductors
An MOS process in which MOS transistors are formed by bridging two adjacent P-type diffusions (source and drain) with a dielectric (gate). When the source and the substrate are grounded and a negative voltage is applied to the gate, a conductive sheet of positive charge (P-channel) is created in the surface of the substrate under the dielectric.
Industry:Semiconductors
The maximum percentage of a lot which may fail a 100% screening step without rejecting the lot. The PDA is predicted on the possibility that a failure mechanism which appears in an abnormally high percentage of a lot might appear at a later time in the balance of the lot. It should, therefore, not be used for screens where all defective devices can be observed and removed (such as internal visual or X-ray).
Industry:Semiconductors
